Semiconductor device and fabrication method thereof

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United States of America Patent

PATENT NO 10644010
SERIAL NO

15683226

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Abstract

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Semiconductor devices and fabrication methods thereof are provided. An exemplary semiconductor device includes at least one FinFET device. The FinFET device includes a substrate, a plurality of fins protruding from the substrate, at least one gate structure on the substrate and across the plurality of fins by covering portions of side and top surfaces of the plurality of fins, and source/drain regions formed in the plurality of fins at two sides of the gate structure. The semiconductor device also includes a Fuse device formed above the FinFET device. The Fuse device includes a positive terminal and a negative terminal. The negative terminal is electrically connected to at least one source region of the FinFET device and the positive terminal is electrically connected to an external pad. Further, the semiconductor device also includes a dielectric layer formed between the FinFET device and the Fuse device.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONSHANGHAI
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONNO 18 WEN CHANG RD ECONOMIC-TECHNOLOGICAL DEVELOPMENT AREA DAXING DISTRICT BEIJING 100716

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gan, Zheng Hao Shanghai, CN 3 5

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