Atomic layer deposition methods and structures thereof
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United States of America Patent
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Dec 1, 2020
Grant Date -
Mar 1, 2018
app pub date -
Oct 23, 2017
filing date -
Oct 20, 2015
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Abstract
A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.
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