Transistor device with high current robustness

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United States of America Patent

PATENT NO 10483384
APP PUB NO 20180061971A1
SERIAL NO

15682807

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Abstract

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A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure, and a gate electrode. The boost structure is arranged between the field-stop region and the second emitter region. The at least one boost structure includes a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region. An overall dopant dose in the drift region and the field-stop region in a current flow direction of the transistor device is higher than a breakthrough charge of a semiconductor material of the drift region and the field-stop region.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baburske, Roman Otterfing, DE 75 330
Bhojani, Riteshkumar Chemnitz, DE 4 1
Lutz, Josef Chemnitz, DE 39 391
Niedernostheide, Franz-Josef Hagen a. T.W., DE 104 737
Schulze, Hans-Joachim Taufkirchen, DE 682 3896

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