Method of Manufacturing a Superjunction Semiconductor Device and Superjunction Semiconductor Device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20180061979A1
SERIAL NO

15683844

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor device is manufactured in a semiconductor body of a wafer by forming a mask on a surface of the semiconductor body. The mask has a plurality of first mask openings in a transistor cell area and a mask opening design outside the transistor cell area. The mask opening design includes one second mask opening or a plurality of second mask openings encircling the transistor cell area. The plurality of second mask openings are consecutively arranged at lateral distances smaller than a width of the plurality of second mask openings. A plurality of first trenches are formed in the semiconductor body at the first mask openings. One or a plurality of second trenches are formed at the one or plurality of second mask openings. The first trenches and the and one or the plurality of second trenches are filled with a filling material including at least a semiconductor material.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AG9500 VILLACH

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirler, Franz Isen, DE 402 3614
Treiber, Maximilian Munich, DE 8 0
Voerckel, Andreas Finkenstein, AT 18 15
Weber, Hans Bayerisch Gmain, DE 131 716

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