METHOD AND SYSTEM FOR MANUFACTURING ELECTRICAL CONTACT FOR PHOTOVOLTAIC STRUCTURES

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United States of America Patent

SERIAL NO

15244885

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Abstract

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A system for fabrication of a photovoltaic structure is provided. During fabrication, the system can deposit a doped amorphous Si layer on a first surface of a crystalline Si substrate; and deposit, using a physical vapor deposition machine, a transparent conductive oxide layer on the doped amorphous Si layer. The deposited transparent conductive oxide layer can include In2O3 doped with TiO2 and Ta2O5, and depositing the transparent conductive oxide layer can involve maintaining the Si substrate at a temperature below 130° C. The system can further deposit a metallic layer on the transparent conductive oxide layer, and anneal the transparent conductive oxide layer.

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Patent Owner(s)

Patent OwnerAddress
SOLARCITY CORPORATION3055 CLEARVIEW WAY SAN MATEO CA 94402

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hu, Jianhua Palo Alto, US 19 122
Kang, Yangsen Santa Clara, US 8 3
Wu, Phillip M San Mateo, US 2 1
Xie, Zhigang San Jose, US 19 115

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