Oxide sintered compact and sputtering target formed from said oxide sintered compact

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United States of America Patent

PATENT NO 10047012
APP PUB NO 20180065893A1
SERIAL NO

15558332

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Abstract

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An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein an average length of cracks existing in the IGZO sintered compact is 3 μm or more and 15 μm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

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Patent Owner(s)

  • JX NIPPON MINING & METALS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kakuta, Koji Ibaraki, JP 5 4
Yamaguchi, Yohei Ibaraki, JP 87 166

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