Magnetoresistance effect element

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United States of America Patent

PATENT NO 10224067
APP PUB NO 20180068681A1
SERIAL NO

15554410

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Abstract

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A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

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Patent Owner(s)

  • 501 TDK CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sasaki, Tomoyuki Tokyo, JP 234 1197

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