Semiconductor device and manufacturing method thereof
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United States of America Patent
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Jul 17, 2018
Grant Date -
Mar 8, 2018
app pub date -
Nov 8, 2017
filing date -
Nov 27, 2013
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor substrate, a photoelectric conversion element, a first isolation insulating film, and a current blocking region. The first isolation insulating film is formed around the photoelectric conversion element. The current blocking region is formed in a region between the photoelectric conversion element and the first isolation insulating film. The current blocking region includes an impurity diffusion layer, and a defect extension preventing layer disposed in contact with the impurity diffusion layer to form a twin with the impurity diffusion layer. The defect extension preventing layer has a different crystal structure from that of the impurity diffusion layer. At least a part of the current blocking region is disposed in contact with the first isolation insulating film.
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