SiC structure, semiconductor device having SiC structure, and process of forming the same

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United States of America Patent

PATENT NO 10283594
APP PUB NO 20180069081A1
SERIAL NO

15694478

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Abstract

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A silicon carbide (SiC) structure and a method of forming the SiC structure are disclosed. The SiC structure includes an SiC substrate and a film provided on the SiC substrate. The SiC substrate contains both of a hexagonal close packed (hcp) structure and a face centered cubic (fcc) structure, and has only one of the hcp surface and the fcc surface, where the hcp surface includes atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while, the fcc surface includes atoms in the topmost layer whose rows are different from rows of atoms in the third layer.

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Patent Owner(s)

  • SUMITOMO ELECTRIC INDUSTRIES LTD.; JAPAN AS REPRESENTED BY PRESIDENT OF TOHOKU UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukidome, Hirokazu Sendai, JP 6 2
Mitsuhashi, Fuminori Itami, JP 14 8
Nagasawa, Hiroyuki Sendai, JP 119 1295
Okada, Masaya Itami, JP 58 285
Suemitsu, Maki Sendai, JP 9 22
Tateno, Yasunori Yokohama, JP 16 86
Ueno, Masaki Itami, JP 238 5127

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