AUTOMATED PROCESS CONTROL OF ATOMIC LAYER DEPOSITION OF TITANIUM NITRIDE THROUGH TREATMENT GAS PULSE TIME
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Sep 9, 2016
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Sep 9, 2016
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Methods are disclosed for depositing titanium nitride (TiN) on a substrate in a chamber by exposing the substrate to titanium tetrachloride (TiCl4) in a chamber, purging the titanium tetrachloride (TiCl4) from the chamber, exposing the substrate to ammonia (NH3), and then purging the ammonia (NH3) from the chamber. Each of these steps is accomplished under various process variables that remain constant when the steps are repeated except for the period of time for exposure of the substrate to the ammonia (NH3).
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