Diode including a Zener diode region

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United States of America Patent

PATENT NO 10629594
APP PUB NO 20180076196A1
SERIAL NO

15816387

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Abstract

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A diode according to the present invention includes a semiconductor layer of a first conductivity type having an impurity concentration of 1×1016 cm−3 to 2.4×1017 cm−3, a Zener diode region of a second conductivity type formed selectively in the semiconductor layer and forming a pn junction with the semiconductor layer, a Schottky metal disposed on the semiconductor layer, forming a Schottky junction with the semiconductor layer, and having a work function of 3 eV to 6 eV, and a JBS (junction barrier Schottky) structure including a plurality of second conductivity type regions formed selectively in the Schottky junction region of the semiconductor layer.

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Patent Owner(s)

  • ROHM CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koshiba, Teruhiro Kyoto, JP 2 1
Makita, Kohei Kyoto, JP 6 26

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