SEMICONDUCTOR DEVICE
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United States of America Patent
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Sep 6, 2017
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Sep 14, 2016
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Abstract
A semiconductor device includes a lateral MOSFET and a vertical semiconductor device that are formed on the same semiconductor substrate. In the lateral MOSFET, the voltage of a back-gate electrode is set to be higher than the voltage of a source electrode and a gate electrode by greater than or equal to a prescribed value (greater than or equal to 40V). A drain-side diffusion region, a drain diffusion region, a drain electrode, a gate insulating film, a gate electrode, and a LOCOS film are formed in annular shapes centered on a source diffusion region. As a result, an active channel region between the drain diffusion region and the source diffusion region as well as peripheral portions of the LOCOS film are also annular-shaped.
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