Structure and method for semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10727229
APP PUB NO 20180076203A1
SERIAL NO

15816386

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Abstract

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A semiconductor device includes a substrate; an isolation structure over the substrate; and two fins in a first region of the semiconductor device extending from the substrate and through the isolation structure. Each of the two fins has a channel region and two source/drain (S/D) regions sandwiching the channel region. The semiconductor device further includes a gate stack over the isolation structure and engaging the channel regions of the two fins; and four S/D features over the S/D regions of the two fins. Each of the four S/D features includes a lower portion and an upper portion over the lower portion. Each of the lower portions of the four S/D features has a cross-sectional profile that is wider at its bottom than at its top. The upper portions of the four S/D features merge into two merged S/D features with one on each side of the gate stack.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kwok, Tsz-Mei Hsinchu, TW 90 2376
Lee, Yi-Jing Hsinchu, TW 88 2271
Yu, Ming-Hua Hsinchu, TW 121 1388

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