Semiconductor device and a manufacturing method thereof
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United States of America Patent
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Jun 4, 2019
Grant Date -
Mar 15, 2018
app pub date -
Sep 8, 2017
filing date -
Sep 12, 2016
priority date (Note) -
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Abstract
The reliability and performances of a semiconductor device having a nonvolatile memory are improved. A control gate electrode is formed over a semiconductor substrate via a first insulation film. A memory gate electrode is formed over the semiconductor substrate via a second insulation film having a charge accumulation part. The second insulation film is formed across between the semiconductor substrate and the memory gate electrode, and between the control gate electrode and the memory gate electrode. Between the control gate electrode and the memory gate electrode, a third insulation film is formed between the second insulation film and the memory gate electrode. The third insulation film is not formed under the memory gate electrode. A part of the memory gate electrode is present under the lower end face of the third insulation film.
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