Trench isolation structures and methods for forming the same

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United States of America Patent

PATENT NO 10347524
APP PUB NO 20180076288A1
SERIAL NO

15262694

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Abstract

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A trench isolation structure is provided. The trench isolation structure includes a substrate. A polygonal trench is disposed in the substrate. An insulating material is disposed in the polygonal trench, and a polygon top-side contact structure is disposed in the polygonal trench and surrounded by the insulating material. The polygon top-side contact structure has the same shape as the polygonal trench from a top view. A method for forming the trench isolation structure is also provided.

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Patent Owner(s)

  • VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Hsiung-Shih Taichung, TW 19 22
Chang, Jui-Chun Hsinchu, TW 42 170
Chen, Li-Che Hsinchu, TW 29 203

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