Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same

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United States of America Patent

PATENT NO 10347754
APP PUB NO 20180076309A1
SERIAL NO

15704269

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Abstract

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A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jaeger, Christian Munich, DE 41 218
Laven, Johannes Georg Taufkirchen, DE 123 608
Philippou, Alexander Munich, DE 34 133
Seifert, Max Christian Munich, DE 3 2
Vellei, Antonio Villach, AT 23 124

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