Importance

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Abstract

According to an embodiment, semiconductor device 1 includes: a drift layer 12 of a first conductivity type; a base layer 13 of a second conductivity type; a source layer 30 of the first conductivity type; a gate trench 21 penetrating the source layer 30 and the base layer 13, and reaching the drift layer 12; a gate electrode 20 and a gate insulating film disposed inside the gate trench 21; an interlayer insulating film 42; a contact hole 43 penetrating the interlayer insulating film 42, the source layer 30, and the base layer 13, and reaching the drift layer 12; a snubber conductive layer 50 disposed in a lower part of the contact hole 43; a snubber sidewall insulating film 55 disposed between a side surface of the snubber conductive layer 50 and the drift layer 12; and a contact 41 disposed above the snubber conductive layer 50 in the contact hole 43 and connected to the source layer 30.

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First Claim