Importance

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Abstract

According to one embodiment of the present invention, a solar cell is provided with an n-type crystalline silicon substrate, and a passivation layer formed on the light receiving surface of the substrate, said passivation layer having a carrier generating function. The n-type crystalline silicon substrate has a doped layer in the vicinity of an interface to the passivation layer, said doped layer being doped to have a conductivity type equal to that of the substrate, and being doped at a dopant concentration equal to or higher than 1×10¹⁷ cm⁻³. The average value of the dopant concentration of the doped layer is 1×10¹⁷-1×10²⁰ cm⁻³, and the thickness of the doped layer is equal to or less than 200 nm.

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First Claim