Importance

Loading Importance Indicators...

Abstract

Systems and methods for selectively etching and depositing material on the surface of a substrate are described. Systems for atomic layer etching (ALE) and atomic layer deposition (ALD) are described which enable alternating exposure to a first precursor and then a second precursor. The substrate processing region is configured to process large surface area substrate (e.g. 300 mm wafers) without requiring direct line-of-sight pathways between the gas inlet into the substrate processing chamber and all portions of the substrate. No plasma excites either of the two precursors either remotely or locally in embodiments. A quartz crystal microbalance is placed close to the substrate pedestal to quantify deposition and etching rates. Only thermal energy from the substrate is used to get the chemical reactions to proceed according to embodiments.

Loading the Abstract Image...

First Claim