Semiconductor memory device and method for manufacturing same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10332904
APP PUB NO 20180083027A1
SERIAL NO

15457396

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Abstract

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A semiconductor memory device includes a conductive layer; a first electrode layer provided above the conductive layer; a second electrode layer provided between the conductive layer and the first electrode layer; a first semiconductor channel body extending through the first electrode layer in a first direction from the conductive layer to the first electrode layer; a second semiconductor channel body provided between the conductive layer and the first semiconductor channel body, the second semiconductor channel body extending through the second electrode layer; and an insulating layer provided between the second semiconductor channel body and the second electrode layer. The second semiconductor channel body includes a first recessed portion in a lateral surface facing the second electrode layer, and the second electrode layer includes a second recessed portion in a surface facing the second semiconductor channel body.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuda, Masahiro Kuwana, JP 163 1320
Izumi, Tatsuo Yokkaichi, JP 40 526
Ohashi, Takuo Kuwana, JP 35 168
Suzuki, Ryota Yokkaichi, JP 133 941
Yamabe, Kazuharu Yokkaichi, JP 10 9

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