Importance

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Abstract

The current disclosure describes a p-type solar cell with back emitter with increased electrical efficiency and decreased manufacturing and material costs. According to one aspect of the present disclosure, the solar cell comprises gallium-doped silicon, closely arranged contact openings in the rear passivation layer, and physical vapor deposition application of at least one metal to create the rear contact. The front and rear contacts may be applied over a sputtered layer of transparent conducting oxide to increase transverse conductivity and permit smaller metal contacts, where desired. A plated layer of nickel or tin may be layered over the Physical Vapor Deposition-applied metal contact to create a stable, solderable surface while minimizing silver costs.

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First Claim