TWO-DIMENSIONAL MATERIALS INTEGRATED WITH MULTIFERROIC LAYERS

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United States of America Patent

SERIAL NO

15819929

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Abstract

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The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.

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Patent Owner(s)

Patent OwnerAddress
THE GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY875 NORTH RANDOLPH STREET SUITE 1425 NAVAL RESEARCH LABORATORY ARLINGTON VA 22203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jonker, Berend T Waldorf, US 27 145

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