Memory device including virtual fail generator and memory cell repair method thereof
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United States of America Patent
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Oct 22, 2019
Grant Date -
Jun 14, 2018
app pub date -
Oct 26, 2017
filing date -
Dec 8, 2016
priority date (Note) -
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Abstract
A memory device includes a memory cell array, a comparator, and a virtual fail generator. The memory cell array includes memory cells. The comparator determines whether a fail of a first memory cell of the memory cell array corresponding to a first address is generated, by comparing data stored in the first memory cell with an expected value. The virtual fail generator generates a second address based on the first address provided from the comparator, in response to the comparator determining that the fail of the first memory cell is generated. The first memory cell and a second memory cell corresponding to the second address are repaired by spare memory cells in response to a repair command.
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