Semiconductor structure and fabricating method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10790392
APP PUB NO 20180166569A1
SERIAL NO

15726015

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Abstract

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In accordance with some embodiments of the present disclosure, a semiconductor structure and a fabricating method thereof are provided. The method for forming a semiconductor structure comprises: forming a base substrate; forming a gate structure on the base substrate; forming openings in the base substrate on both sides of the gate structure; forming a barrier layer on sidewalls of the openings adjacent to the gate structure; and forming a doped layer in the openings, and forming a source region or a drain region in the doped layer.

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Patent Owner(s)

  • SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhou, Fei Shanghai, CN 332 2134

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