Importance

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Abstract

A quantum cascade laser includes a laser structure including a substrate and a semiconductor laminate region, the substrate having a principal surface that includes first to third areas that extend in a direction of a first axis, the substrate having first and second end faces arranged in the direction of the first axis, the semiconductor laminate region having first and second mesas and a semiconductor mesa which are arranged on the first to third areas, respectively; and a first semiconductor film disposed on the third area, side faces of the first and second mesas, and an end face of the semiconductor mesa. The laser structure includes a first region including the semiconductor mesa, and a second region including the first and second mesas. The second region includes a recess defined by the third area, the side face of the first mesa, and the side face of the second mesa.

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First Claim