Gate oxide soft breakdown detection circuit

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United States of America Patent

PATENT NO 10247770
APP PUB NO 20180172753A1
SERIAL NO

15381992

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Abstract

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Various embodiments of a gate oxide breakdown detection technique detect gate oxide degradation due to stress on a per part basis without destroying functional circuits for an intended application. Stress on the gate oxide may be applied while nominal drain currents flow through a device, thereby stressing the device under conditions similar to actual operating conditions. The technique is relatively fast and does not require analog amplifiers or tuning of substantial amounts of other additional circuitry as compared to conventional gate oxide breakdown detection techniques.

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Patent Owner(s)

  • ADVANCED MICRO DEVICES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Deshpande, Abhay Bangalore, IN 5 43
Iyer, Arun S Bangalore, IN 3 44
Kosonocky, Stephen V Ft. Collins, US 74 1010
Singrigowda, Girish Anathahally Bangalore, IN 2 0
Vallur, Prasanth K Bangalore, IN 2 0

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