Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10396549
APP PUB NO 20180205225A1
SERIAL NO

15918309

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a semiconductor device making it possible to promote area reduction while maintaining ESD resistance. The semiconductor device includes a power wire, a ground wire and a protection circuit provided between the power wire and the ground wire so as to cope with electrostatic discharge. The protection circuit includes a first transistor, a first resistive element, a second transistor, a first capacitive element, a first inverter and a protection transistor. A gate width of the second transistor is narrower than a gate width of the first transistor.

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Patent Owner(s)

  • RENESAS ELECTRONICS CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arakawa, Masashi Tokyo, JP 16 106
Fukui, Tadashi Tokyo, JP 6 32
Takayanagi, Koji Tokyo, JP 39 195

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