Magnetoresistance effect element

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United States of America Patent

PATENT NO 10937951
APP PUB NO 20180254409A1
SERIAL NO

15911689

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Abstract

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A magnetoresistance effect element according to an aspect of the present disclosure includes a first ferromagnetic layer as a magnetization fixed layer including a ferromagnetic Heusler alloy, a second ferromagnetic layer as a magnetization free layer including a ferromagnetic Heusler alloy, and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic spacer layer includes a nonmagnetic Fe group, Co group, or Ni group Heusler alloy.

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Patent Owner(s)

Patent OwnerAddress
TDK CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inubushi, Kazuumi Tokyo, JP 37 72
Nakada, Katsuyuki Tokyo, JP 91 218

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