Active device which has a high breakdown voltage, is memory-less, traps even harmonic signals and circuits used therewith
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United States of America Patent
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Jul 9, 2019
Grant Date -
Sep 13, 2018
app pub date -
May 14, 2018
filing date -
Jun 19, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gale of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.
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