Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size

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United States of America Patent

APP PUB NO 20180266016A1
SERIAL NO

15983455

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Abstract

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Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

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Patent Owner(s)

Patent OwnerAddress
GLOBALWAFERS CO LTDHSINCHU TAIWAN R O C

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lu, Tse-Wei HsinChu, TW 5 10
Lu, Zheng O'Fallon, US 93 585
Samanta, Gaurab St.Peters, US 23 69
Tsai, Feng-Chien Taipei, TW 19 12

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