Etching reactants and plasma-free etching processes using the same
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United States of America Patent
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May 12, 2020
Grant Date -
Nov 15, 2018
app pub date -
Sep 1, 2016
filing date -
Nov 10, 2015
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Abstract
Disclosed are processes of removing layers from substrates using fluorinated reactants having the formula MFx(adduct)n, wherein x ranges from 2 to 6 inclusive; n ranges from 0 to 5 inclusive; M is selected from the group consisting of P, Ti, Zr, Hf, V, Nb, Ta, Mo, and W; and the adduct is a neutral organic molecule selected from THF, dimethylether, diethylether, glyme, diglyme, triglyme, polyglyme, dimethylsulphide, diethylsulphide, or methylcyanide. The fluorinated reactants dry etch the nitride layers without utilizing any plasma.
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