Apparatus and methods for uniformly forming porous semiconductor on a substrate

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United States of America Patent

PATENT NO 10829864
APP PUB NO 20180347063A1
SERIAL NO

15851023

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Abstract

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This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

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TRUTAG TECHNOLOGIES INCKAPOLEI HI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ashjaee, Jay Cupertino, US 17 164
Kamian, George Scotts Valley, US 10 1044
Kramer, Karl-Josef San Jose, US 57 917
Moslehi, Mehrdad M Los Altos, US 302 13072
Tamilmani, Subramanian San Jose, US 18 201
Yonehara, Takao Milpitas, US 214 10276

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