Semiconductor device providing improved read and write margin, and manufacturing method for the same

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United States of America Patent

PATENT NO 10490652
APP PUB NO 20180350916A1
SERIAL NO

15995265

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Abstract

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The present disclosure relates to the field of semiconductor technologies, and discloses semiconductor devices and manufacturing methods for the same. A semiconductor device may include: a substrate; a first active region on the substrate; a first gate structure positioned on the first active region; and a first source and a first drain that are positioned in the first active region and respectively on two sides of the first gate structure, where a size of the first drain is larger than a size of the first source. In forms of the present disclosure, because the size of the first drain is larger than the size of the first source, a current from the first drain to the first source is greater than a current from the first source to the first drain, so that the semiconductor device can make a read current relatively low and a write current relatively high in a static random access memory (SRAM), thereby improving a read margin and a write margin.

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Patent Owner(s)

  • SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feng, Junhong Shanghai, CN 14 23
Gan, Zhenghao Shanghai, CN 19 173

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