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Abstract

The present application discloses embodiments of a switchable optical filter that is based on carrier injection induced semiconductor to metal phase transition (SMT) of vanadium oxide-based (e.g., VO₂) thin films which can reversibly change from optically transparent to opaque while undergoing such phase transition. Electrical carrier injection may be established by an electric field or by photoexcitation. The SMT may also be induced by a combination of applying an electric field and optical flux. Such a switchable optical filter, when inserted in the optical path of an optical radiation sensor, may be used to control and/or limit high power optical beams, such as a laser beam impinging on one or more sensor elements. Since the SMT may be configured to occur at ultrafast time scales (e.g., approximately 100 femtoseconds), it may also act as a beam shutter and/or as a fast optical beam modulator.

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