HOT EXTRUDED MATERIAL FOR CYLINDRICAL SPUTTERING TARGET AND METHOD OF MANUFACTURING CYLINDRICAL SPUTTERING TARGET

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United States of America Patent

APP PUB NO 20190055625A1
SERIAL NO

16081181

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A hot extruded material for a cylindrical sputtering target is provided, in which a purity of copper is in a range of 99.99 mass % to 99.9995 mass %, an Al content is 0.5 mass ppm or lower, a Si content is 1 mass ppm or lower, a C content is 1 mass ppm or lower, an O content is 2 mass ppm or lower, a H content is 1 mass ppm or lower, and a S content is 5 mass ppm or lower, and an average crystal grain size measured at 36 positions in total is in a range of 10 μm to 110 μm and a Vickers hardness measured at the 36 positions in total is in a range of 40 Hv to 100 Hv, the 36 positions being selected by obtaining three cross-sections perpendicular to an axis O direction from one end portion, an intermediate portion, and another end portion in the axis O direction, setting four positions in a peripheral direction from each of the three cross-sections, and setting three positions in each of the four positions, the three positions including a surface part, a radially ¼ position from the surface part, and a radially ½ position from the surface part.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI MATERIALS CORPORATIONTOKYO 100-8117

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kumagai, Satoshi Osaka, JP 43 258
Ohto, Michiaki Iwaki-shi, JP 5 1
Sakurai, Akira Osaka, JP 93 1079

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