HIGH VOLTAGE CAPACITORS AND METHODS OF MANUFACTURING THE SAME
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United States of America Patent
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Apr 11, 2019
app pub date -
Oct 11, 2017
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Oct 11, 2017
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Abstract
High voltage capacitors and methods of manufacturing the same are disclosed. An apparatus includes a first electrode of a capacitor above a semiconductor substrate. The first electrode is parallel to a plane perpendicular to the substrate. The apparatus further includes a second electrode spaced apart from the first electrode and parallel to the plane. The first electrode and the second electrode each including: (1) a first metal segment in a first metal layer, (2) a second metal segment in a second metal layer, and (3) a conductive via in an intermetal dielectric layer between the first and second metal layers interconnecting the first and second metal segments.
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