COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20190189631A1
SERIAL NO

16217049

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The present invention provides a composition for etching a silicon nitride film and a manufacturing method of a semiconductor device using the same, wherein the composition for etching a silicon nitride film comprises phosphoric acid, metaphosphoric acid, an ammonium salt-based compound, and water.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
SOULBRAIN CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LEE, Jin Uk Seongnam-si, KR 94 398
LIM, Jung Hun Seongnam-si, KR 36 109
PARK, Jae Wan Seongnam-si, KR 69 487

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation