COMPONENT FOR FABRICATING SIC SEMICONDUCTOR, HAVING PLURALITY OF LAYERS HAVING DIFFERENT TRANSMITTANCES, AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Issued Date -
Jul 4, 2019
app pub date -
Aug 18, 2017
filing date -
Aug 18, 2017
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Abstract
Provided according to an embodiment of the present invention is a component for fabricating an SiC semiconductor, having a plurality of layers having different transmittances, the component comprising two or more superposed layers, wherein each of the superposed layers contains SiC and has a transmittance value different from that of another adjacent layer.
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