III-V SEMICONDUCTOR WAVEGUIDE NANORIDGE STRUCTURE
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United States of America Patent
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Issued Date -
Jul 18, 2019
app pub date -
Dec 20, 2018
filing date -
Dec 20, 2018
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Abstract
A III-V semiconductor waveguide nanoridge structure having a narrow supporting base with a freestanding wider body portion on top, is disclosed. In one aspect, the III-V waveguide includes a PIN diode. The waveguide comprises a III-V semiconductor waveguide core formed in the freestanding wider body portion; at least one heterojunction incorporated in the III-V semiconductor waveguide core; a bottom doped region of a first polarity positioned at a bottom of the narrow supporting base, forming a lower contact; and an upper doped region of a second polarity, forming an upper contact. The upper contact is positioned in at least one side wall of the freestanding wider body portion.
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