III-V SEMICONDUCTOR WAVEGUIDE NANORIDGE STRUCTURE

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United States of America Patent

APP PUB NO 20190219846A1
SERIAL NO

16228486

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Abstract

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A III-V semiconductor waveguide nanoridge structure having a narrow supporting base with a freestanding wider body portion on top, is disclosed. In one aspect, the III-V waveguide includes a PIN diode. The waveguide comprises a III-V semiconductor waveguide core formed in the freestanding wider body portion; at least one heterojunction incorporated in the III-V semiconductor waveguide core; a bottom doped region of a first polarity positioned at a bottom of the narrow supporting base, forming a lower contact; and an upper doped region of a second polarity, forming an upper contact. The upper contact is positioned in at least one side wall of the freestanding wider body portion.

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Patent Owner(s)

Patent OwnerAddress
IMEC VZWKAPELDREEF 75 LEUVEN 3001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kunert, Bernardette Wilsele, BE 14 15
Pantouvaki, Maria loanna Kessel-lo, BE 1 0
Srinivasan, Ashwyn Heverlee, BE 3 1
Van, Campenhout Joris Brussel, BE 17 102

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