Doping system, doping method and method for manufacturing silicon carbide semiconductor device
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United States of America Patent
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Jul 28, 2020
Grant Date -
Jul 25, 2019
app pub date -
Nov 27, 2018
filing date -
Jan 19, 2018
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Abstract
A doping system includes a light source to emit an optical pulse; a light source controller connected to the light source, to control an energy density of the optical pulse; and a beam adjusting unit to irradiate the optical pulse to a surface of a doping-object made of silicon carbide on which an impurity-containing source-film containing impurity atoms is deposited. The light source controller irradiates a first optical pulse to the impurity-containing source-film so as to form a reaction-product layer in the doping-object, and irradiates a second optical pulse having an energy density higher than an energy density of the first optical pulse, so as to introduce the impurity atoms into the target through the reaction-product layer.
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