GE, SIGE OR GERMANIDE WASHING METHOD
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United States of America Patent
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Aug 22, 2019
app pub date -
Dec 5, 2016
filing date -
Dec 5, 2016
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Abstract
In a step of washing Ge, SiGe or germanide layers in the production of semiconductor devices, resists or metal residues are efficiently removed through washing without dissolving Ge, SiGe or germanides. A sulfuric acid solution with a sulfuric acid concentration of 90 wt % or more and an oxidant concentration of 200 g/L or less is used as a washing liquid. Examples of the washing liquid include an electrolytic solution obtained by electrolysis of the sulfuric acid solution, a solution obtained by mixing hydrogen peroxide with the acid solution or a solution obtained by dissolving an ozone gas in the sulfuric acid solution. A treatment temperature during the washing is preferably 50° C. or less.
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