SENSITIVE FIELD EFFECT DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Sep 12, 2019
app pub date -
Mar 14, 2017
filing date -
Nov 14, 2016
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Abstract
The present invention concerns a sensitive field effect device (100) comprising a semiconductor channel (110), a source electrode (120) connected to said semiconductor channel (110), a drain electrode (130) connected to said semiconductor channel (110), such that said semiconductor channel (110) is interposed between said source electrode (120) and said drain electrode (130), a gate electrode (140) and a dielectric layer (150) interposed between said gate electrode (140) and said semiconductor channel (110), characterized in that said semiconductor channel (110) is a layer and is made of an amorphous oxide and in that said sensor means (170, 171, 172, 173, 174, 175, 175) are configured to change the voltage between said gate electrode (140) and said source electrode (120) upon a sensing event capable of changing their electrical state.
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