Sense Amplifier Constructions
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United States of America Patent
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Issued Date -
Sep 19, 2019
app pub date -
Jun 3, 2019
filing date -
Aug 31, 2016
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Abstract
A sense amplifier construction comprises a first n-type transistor and a second n-type transistor above the first n-type transistor. A third p-type transistor is included and a fourth p-type transistor is above the third p-type transistor. A lower voltage activation line is electrically coupled to n-type source/drain regions that are elevationally between respective gates of the first and second n-type transistors. A higher voltage activation line is electrically coupled to p-type source/drain regions that are elevationally between respective gates of the third and fourth p-type transistors.
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