Method of fabricating semiconductor device
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United States of America Patent
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Oct 13, 2020
Grant Date -
Sep 19, 2019
app pub date -
May 22, 2019
filing date -
Apr 3, 2017
priority date (Note) -
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Abstract
A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.
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