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United States of America Patent

APP PUB NO 20190293971A1
SERIAL NO

16286533

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An optoelectronic device comprising: a silicon-on-insulator (SOI) substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; a waveguide region, where a portion of the silicon device layer and a portion of the BOX layer underneath the portion of the device layer have been removed, the portion of the BOX layer having been replaced with a layer of silicon and a layer of crystalline oxide on top of the silicon; and a waveguide structure located directly on top of the crystalline oxide layer, the waveguide structure including a P doped region, and an N doped region with an intrinsic region in-between, creating a PIN junction across which a bias can be applied to create a modulation region.

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Patent Owner(s)

Patent OwnerAddress
ROCKLEY PHOTONICS LIMITEDCLARENDON BUSINESS CENTRE BELSYRE COURT 57 WOODSTOCK ROAD OXFORD OX2 6HJ

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yu, Guomin Glendora, US 39 61
Zilkie, Aaron John Pasadena, US 19 56

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