Importance

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Abstract

An optoelectronic device comprising: a silicon-on-insulator (SOI) substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; a waveguide region, where a portion of the silicon device layer and a portion of the BOX layer underneath the portion of the device layer have been removed, the portion of the BOX layer having been replaced with a layer of silicon and a layer of crystalline oxide on top of the silicon; and a waveguide structure located directly on top of the crystalline oxide layer, the waveguide structure including a P doped region, and an N doped region with an intrinsic region in-between, creating a PIN junction across which a bias can be applied to create a modulation region.

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First Claim