Silicon Carbide Devices and Methods for Manufacturing the Same

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United States of America Patent

APP PUB NO 20190295981A1
SERIAL NO

16360570

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Abstract

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A semiconductor device includes a silicon carbide layer, a metal carbide layer arranged over the silicon carbide layer, and a solder layer arranged over and in contact with the metal carbide layer.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AG85579 NEUBIBERG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Menath, Markus Regensburg, DE 17 117
Roesner, Michael Villach, AT 33 133
Stranzl, Gudrun Goedersdorf, AT 29 106

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