Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

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United States of America Patent

PATENT NO 10714610
APP PUB NO 20190296146A1
SERIAL NO

16113304

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Abstract

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A semiconductor device of an embodiment includes a silicon carbide layer; a gate electrode; a gate insulating layer disposed between the silicon carbide layer and the gate electrode; a first region disposed in the silicon carbide layer and containing nitrogen (N); and a second region disposed between the first region and the gate insulating layer, and containing at least one element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), hydrogen (H), deuterium (D), and fluorine (F).

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asaba, Shunsuke Kawasaki, JP 19 3
Fukatsu, Shigeto Yokohama, JP 13 21
Iijima, Ryosuke Setagaya, JP 92 214
Ito, Toshihide Shibuya, JP 54 242
Nakabayashi, Yukio Yokohama, JP 35 371
Shimizu, Tatsuo Shinagawa, JP 285 2223

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