Constant current circuit, semiconductor device, electronic apparatus, and method of manufacturing semiconductor device

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United States of America Patent

PATENT NO 10635126
APP PUB NO 20190302823A1
SERIAL NO

16365767

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Abstract

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In an N-channel depletion type first transistor, a gate is connected to a reference node and a drain is connected to a current output node. In a P-channel enhancement type second transistor, a gate and a drain are connected to the reference node and a source is connected to a source of the N-channel depletion type first transistor.

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Patent Owner(s)

  • SEIKO EPSON CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Makiuchi, Yoshiki Minowa-machi, JP 18 118

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