Wide Band Gap Semiconductor Device and Method for Forming a Wide Band Gap Semiconductor Device
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United States of America Patent
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Oct 10, 2019
app pub date -
Apr 3, 2019
filing date -
Apr 4, 2018
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Abstract
A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.
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