Importance

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Abstract

A semiconductor device includes: a silicon carbide epitaxial layer formed on one main surface of a single-crystal silicon carbide substrate; a recessed portion and a protruding portion formed on a surface of the silicon carbide epitaxial layer; an inclined surface formed between the recessed portion and the protruding portion; a first contact area of first conductivity type formed on the inclined surface side of the bottom surface of the recessed portion; a second contact area of second conductivity type in contact with the first contact area; a drift area of first conductivity type formed on an upper surface of the protruding portion; a body area of second conductivity type formed on the inclined surface between the first contact area and the drift area; a gate insulating film that covers the inclined surface; a gate electrode; a source electrode; and a drain electrode, wherein an angle of the inclined surface with respect to the one main surface of the single-crystal silicon carbide substrate is 40° or more and 70° or less.

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First Claim